SCT3017ALHRC11

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755-SCT3017ALHRC11

SCT3017ALHRC11

Mfr.:

Description:
MOSFET 650V 118A 427W SIC 17mOhm TO-247N

Datasheet:

ECAD Model:
SCT3017ALHRC11 ECAD Model
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In Stock: 499

Stock:

499  

Factory Lead Time:

28 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

-,-- €
-,-- €

Pricing (EUR)

Qty. Unit Price
Ext. Price
1 88,22 € 88,22 €
5 86,27 € 431,35 €
10 83,68 € 836,80 €
25 81,22 € 2.030,50 €
products found.
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Product Attribute Attribute Value Search Similar
ROHM Semiconductor
MOSFET
RoHS:  Details
SiC
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
118 A
17 mOhms
- 4 V, + 22 V
2.7 V
172 nC
- 55 C
+ 175 C
427 W
Enhancement
AEC-Q101
Tube
Configuration: Single
Series: SCT3x
Transistor Type: 1 N-Channel
Brand: ROHM Semiconductor
Forward Transconductance - Min: 16 S
Fall Time: 31 ns
Product Type: MOSFET
Rise Time: 44 ns
Factory Pack Quantity: 30
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 64 ns
Typical Turn-On Delay Time: 30 ns
Unit Weight: 14,774 g
products found.
To show similar products, select at least one checkbox 
                    
ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50
TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290095
ECCN:
EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

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