TP65H035G4WSQA

Transphorm
227-TP65H035G4WSQA

TP65H035G4WSQA

Mfr.:

Description:
MOSFET GAN FET 650V 46.5A TO247

Lifecycle:
New Product: New from this manufacturer.

Datasheet:

ECAD Model:
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Learn more about Transphorm TP65H035G4WSQA

In Stock: 715

Stock:

715 Can Dispatch Immediately

Factory Lead Time:

16 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1

-,-- €
-,-- €

Pricing (EUR)

Qty. Unit Price
Ext. Price
17,97 € 17,97 €
15,84 € 158,40 €
15,60 € 468,00 €
15,11 € 906,60 €
13,68 € 1.641,60 €
13,45 € 3.631,50 €
12,66 € 6.456,60 €
1.020 Quote
Product Attribute Attribute Value
Transphorm
Product Category: MOSFET
RoHS:  Details
GaN
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
47.2 A
41 mOhms
- 20 V, + 20 V
4.8 V
22 nC
- 55 C
+ 175 C
187 W
Enhancement
Gen IV
Tube
Brand: Transphorm
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 10 ns
Factory Pack Quantity: 30
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 94 ns
Typical Turn-On Delay Time: 60 ns
TARIC:
8541290000
USHTS:
8541290095
ECCN:
EAR99

Gen IV SuperGaN® FETs

Transphorm Gen IV SuperGaN® FETs are normally-off devices that enable the AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN® platform comes with advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. These Gen IV FETs are available in two variants like TP65H035G4WS which comes in a 3-lead TO-247 package and TP65H300G4LSG which comes in an 8x8 PQFN package.

Automotive (AEC-Q101) Qualified GaN FETs

Transphorm Automotive (AEC-Q101) Qualified GaN FETs are normally-off devices that offer superior reliability and performance. The devices combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The series offers improved efficiency over silicon through lower gate charge and crossover loss, and smaller reverse recovery charge. Transphorm Automotive (AEC-Q101) Qualified GaN FETs are ideal for automotive, datacom, PV inverters, and industrial applications.

TP65H035G4WSQA 650V SuperGaN® FET

Transphorm TP65H035G4WSQA 650V SuperGaN® FET is a normally-off device using Transphorm's Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET. The device offers superior reliability and performance, and with the SuperGaN® platform, it uses advanced epi and patented design technologies to simplify manufacturability. This improves efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

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