Advanced Linear Devices ALD31070x P-Channel EPAD® MOSFET Arrays
Advanced Linear Devices ALD31070x P-Channel EPAD® MOSFET Arrays are high-precision monolithic quad p-channel MOSFET arrays. These MOSFET arrays belong to the EPAD® matched pair MOSFET family. The ALD31070x MOSFET arrays are used for low-voltage and low-power small signal applications with low gate threshold voltages of 0V and -0.2V. These arrays are designed for exceptional matching of electrical device characteristics. Fabricated on the same monolithic chip, the ALD31070x arrays offer excellent temperature tracking characteristics. These MOSFET arrays feature a versatile design for various precision analog applications like current mirrors, matching circuits, and current sources.
Features
- Precision matched Gate Threshold voltages
- Sub-threshold voltage operation
- Nano-power operation
- Wide dynamic operating current ranges
- Exponential operating current ranges
- Matched transconductance and output conductance
- EPAD® CMOS technology
- Matched and tracked temperature characteristics
- Tight lot-to-lot parametric control
- Positive, zero, and negative VGS(th) tempco bias currents
- Low input capacitance
- Low input/output leakage currents
- 8-pin or 16-pin SOIC or plastic DIP packages
Applications
- 0.5% precision current mirrors and current sources
- Low Tempco (≤50ppm/°C) current mirrors/sources
- Energy harvesting circuits
- Very low voltage analog and digital circuits
- Backup battery circuits and power failure detectors
- Precision low-level voltage-clamps
- Low-level zero-crossing detector
- Source followers and buffers
- Precision capacitive probes and sensor interfaces
- Precision charge detectors and charge integrators
- Discrete differential amplifier input stage
- Peak-detectors and level-shifters
- High-side switches and Sample-and-Hold switches
- Precision current multipliers
- Discrete analog switches/multiplexers
- Discrete voltage comparators
Specifications
- Gate threshold voltages [VGS(th)]
- 0V for ALD310700A/ALD310700
- -0.2V for ALD310702A/ALD310702
- -0.4V for ALD310704A/ALD310704
- -0.8V for ALD310708A/ALD310708
- Precision offset voltages (VOS)
- 2mV maximum for ALD310700A, 10mV maximum for ALD310700
- 2mV maximum for ALD310702A, 10mV maximum for ALD310702
- 1mV typical for ALD310704A, 2mV typical for ALD310704
- 1mV typical for ALD310708A, 2mV typical for ALD310708
- Low minimum operating voltage of less than 0.2V
- Ultra-low minimum operating current of less than 1nA
- -8.0V maximum drain-source voltage
- -8.0V maximum gate-source voltage
- 80mA maximum operating current
- 500mW maximum power dissipation
- Temperatures
- 0 to +70°C operating range
- -65°C to +150°C storage range
- +260°C maximum lead temperature for 10s
Block Diagram
Additional Resource
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Published: 2018-01-09
| Updated: 2022-07-29