Analog Devices HMC7229LS6 is designed as a four-stage GaAs pHEMT MMIC 1W power amplifier. The HMC7229LS6 features an integrated, temperature-compensated 37 to 40GHz on-chip power detector. Operating from a 6V supply, the HMC7229LS6 amplifier provides 24dB gain and +32dBm saturated output power at 18% PAE. With an excellent 40dBm IP3, the HMC7229LS6 is well-suited for linear applications. Applications include high-capacity, point-to-point or multi-point radios as well as VSAT/SATCOM applications requiring 32dBm of efficient saturated output power. For ease of integration in higher-level assemblies, the RF I/Os are internally matched at 50Ω and DC blocked. The power amplifier is available in ceramic, high frequency, air cavity 6x6mm package. The package exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.
+32dBm Pout @ 18% PAE
P1dB Output Power: +31.5dBm
High Output IP3: +40dBm
High Gain: 24dB
50Ω Matched Input/Output
Ceramic 6x6 mm High Frequency Air Cavity Package
VSAT & SATCOM
Associated Eval Board
Analog Devices Inc. EVAL01-HMC7229LS6 Evaluation Board
Helps designers evaluate the features of the HMC7229LS6 Power Amplifiers.