Broadcom AFBR-S4N33C013 3mm NUV-HD Single SiPM

Broadcom AFBR-S4N33C0133mm NUV-HD Single SiPM (Silicon Photomultiplier) features an active area of 3.0mm x 3.0mm in a chip-sized package. The silicon photomultiplier is used for ultra-sensitive precision measurement of single photons.

The Broadcom AFBR-S4N33C013 allows high packing density of the single chips using through-silicon-via (TSV) technology and a chip-sized package (CSP). Larger areas can be covered by tiling multiple AFBR-S4N33C013 CSPs, with very few edge losses. The protective layer is made by a glass highly transparent down to UV wavelengths. The protective layer results in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum.

The AFBR-S4N33C013 SiPM is designed for the detection of low-level pulsed light sources. These are especially suited for the detection of Cherenkov- or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr).

The AFBR-S4N33C013 NUV-HD SiPM has an operating temperature range from -40°C to +85°C, which is lead-free and RoHS compliant.


  • High PDE of more than 54% at 420nm
  • Chip-sized package (CSP)
  • Excellent SPTR and CRT
  • Excellent uniformity of breakdown voltage, 180mV (3 sigma)
  • Excellent uniformity of gain
  • With TSV technology (4-side tileable), with high fill factors
  • Size 3.14mm x 3.14mm2
  • Cell pitch 30μm x 30μm2
  • Highly transparent glass protection layer
  • Operating temperature range from -40°C to +85°C
  • RoHS and REACH compliant


  • X-ray and gamma ray detection
  • Gamma ray spectroscopy
  • Safety and security
  • Nuclear medicine
  • Positron emission tomography
  • Life sciences
  • Flow cytometry
  • Fluorescence – luminescence measurements
  • Time correlated single photon counting
  • High energy physics
  • Astrophysics


  • -40°C to +85°C Storage temperature
  • -40°C to +85°C Operating temperature
  • 245°C Soldering temperature
  • 60s Lead soldering time
  • 2kV Electrostatic discharge voltage capability HBM
  • 500V Electrostatic discharge voltage capability CDM
  • 10V Operating over voltage

Block Diagram

Block Diagram - Broadcom AFBR-S4N33C013 3mm NUV-HD Single SiPM
Published: 2020-08-11 | Updated: 2023-01-26