The Broadcom AFBR-S4N33C013 allows high packing density of the single chips using through-silicon-via (TSV) technology and a chip-sized package (CSP). Larger areas can be covered by tiling multiple AFBR-S4N33C013 CSPs, with very few edge losses. The protective layer is made by a glass highly transparent down to UV wavelengths. The protective layer results in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum.
The AFBR-S4N33C013 SiPM is designed for the detection of low-level pulsed light sources. These are especially suited for the detection of Cherenkov- or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr).
The AFBR-S4N33C013 NUV-HD SiPM has an operating temperature range from -40°C to +85°C, which is lead-free and RoHS compliant.
Features
- High PDE of more than 54% at 420nm
- Chip-sized package (CSP)
- Excellent SPTR and CRT
- Excellent uniformity of breakdown voltage, 180mV (3 sigma)
- Excellent uniformity of gain
- With TSV technology (4-side tileable), with high fill factors
- Size 3.14mm x 3.14mm2
- Cell pitch 30μm x 30μm2
- Highly transparent glass protection layer
- Operating temperature range from -40°C to +85°C
- RoHS and REACH compliant
Applications
- X-ray and gamma ray detection
- Gamma ray spectroscopy
- Safety and security
- Nuclear medicine
- Positron emission tomography
- Life sciences
- Flow cytometry
- Fluorescence – luminescence measurements
- Time correlated single photon counting
- High energy physics
- Astrophysics
Specifications
- -40°C to +85°C Storage temperature
- -40°C to +85°C Operating temperature
- 245°C Soldering temperature
- 60s Lead soldering time
- 2kV Electrostatic discharge voltage capability HBM
- 500V Electrostatic discharge voltage capability CDM
- 10V Operating over voltage
Block Diagram
