Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

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Resultados: 33
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Microchip Technology MOSFETs de SiC FG, SIC MOSFET, TO-247 4-LEAD 982Em estoque
Mín.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Microchip Technology MOSFETs de SiC MOSFET SIC 1200 V 25 mOhm TO-247-4 258Em estoque
Mín.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Microchip Technology Diodos Schottky de SiC SIC SBD 1200 V 30 A TO-220 826Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-220-2
Microchip Technology Diodos Schottky de SiC UNRLS, FG, GEN2 SIC SBD 141Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology Diodos Schottky de SiC 700 V, 10 A SiC SBD 623Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-220-2
Microchip Technology Diodos Schottky de SiC SIC SBD 1200 V 30 A TO-247 43Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-3
Microchip Technology Diodos Schottky de SiC 1200 V, 30 A SiC SBD 575Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology Diodos Schottky de SiC SIC SBD 1200 V 50 A TO-247 888Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2

Microchip Technology Diodos Schottky de SiC SIC SBD 1200 V 50 A TO-247 76Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-3
Microchip Technology MOSFETs de SiC MOSFET SIC 1700 V 750 mOhm TO-247 989Em estoque
Mín.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-3
Microchip Technology MOSFETs de SiC MOSFET SIC 1700 V 35 mOhm TO-268 96Em estoque
Mín.: 1
Mult.: 1

SiC MOSFETS SiC SMD/SMT TO-268-3
Microchip Technology Diodos Schottky de SiC UNRLS, FG, GEN2 SIC SBD 18Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology Diodos Schottky de SiC 1200 V, 10 A SiC SBD 82Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology Diodos Schottky de SiC 1200 V, 10 A SiC SBD 75Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-220-2
Microchip Technology MOSFETs de SiC MOSFET SIC 700 V 15 mOhm TO-247-4 49Em estoque
Mín.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Microchip Technology Diodos Schottky de SiC SIC SBD 700 V 30 A TO-247 159Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology Diodos Schottky de SiC 700V, 30A SiC SBD 70Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes SMD/SMT D3PAK
Microchip Technology Diodos Schottky de SiC SIC SBD 1200 V 30 A TO-268 25Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes SMD/SMT D3PAK
Microchip Technology Diodos Schottky de SiC 700 V, 50 A SiC SBD 105Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2
Microchip Technology Diodos Schottky de SiC SIC SBD 1200 V 50 A TO-268 46Em estoque
Mín.: 1
Mult.: 1

SiC Schottky Diodes SMD/SMT D3PAK
Microchip Technology MOSFETs de SiC MOSFET SIC 700 V 60 mOhm TO-247-4 55Em estoque
Mín.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Microchip Technology MOSFETs de SiC MOSFET SIC 1200 V 80 mOhm TO-247-4 32Em estoque
120Esperado 09/03/2026
Mín.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Microchip Technology MOSFETs de SiC MOSFET SIC 1700 V 750 mOhm TO-268 124Em estoque
Mín.: 1
Mult.: 1

SiC MOSFETS SiC SMD/SMT D3PAK-3
Microchip Technology MOSFETs de SiC MOSFET SIC 1700 V 35 mOhm TO-247-4
509Esperado 10/12/2026
Mín.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Microchip Technology Diodos Schottky de SiC UNRLS, FG, GEN2 SIC SBD
450Esperado 09/25/2026
Mín.: 1
Mult.: 1

SiC Schottky Diodes Through Hole TO-247-2