N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

Results: 12
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
STMicroelectronics MOSFETs N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET
Datasheet
2.368In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 12 A 340 mOhms - 10 V, 10 V 3 V 17.8 nC - 55 C + 150 C 92 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package
Datasheet
800In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 10 A 450 mOhms - 30 V, 30 V 3 V 17.3 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package
Datasheet
2.544In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2.500

Si SMD/SMT N-Channel 1 Channel 800 V 16 A 220 Ohms - 30 V, 30 V 4 V 25.9 nC - 55 C + 150 C 105 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
Datasheet
997In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 5 A 1.1 Ohms - 30 V, 30 V 4 V 5.7 nC - 55 C + 150 C 21 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
Datasheet
38In Stock
2.000On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 7 A 600 mOhms - 30 V, 30 V 4 V 10.7 nC - 55 C + 150 C 23 W Enhancement MDmesh Tube

STMicroelectronics MOSFETs N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
Datasheet
1.008In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 16 A 220 mOhms - 30 V, 30 V 3.5 V 25.9 nC - 55 C + 150 C 27 W Enhancement Tube
STMicroelectronics MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
Datasheet
1.055In Stock
Min.: 1
Mult.: 1

Si Tube
STMicroelectronics MOSFETs N-channel 800 V, 400 mOhm typ., 8 A MDmesh K6 Power MOSFET
Datasheet
169In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 10 A 450 mOhms Enhancement Tube
STMicroelectronics MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
Datasheet
698In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 600 mOhms - 30 V, 30 V 4 V 10.7 nC - 55 C + 150 C 86 W Enhancement Tube


STMicroelectronics MOSFETs N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package
Datasheet
58In Stock
1.000Expected 02/05/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 10 A 220 mOhms - 30 V, 30 V 4 V 25.9 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1.000
Mult.: 1.000

Si Through Hole TO-220-3 1 Channel 800 V 12 A 340 mOhms - 30 V, 30 V 3.5 V - 55 C + 150 C 115 W Enhancement Tube
STMicroelectronics MOSFETs N-channel 800 V, 750 mOhm typ., 6 A MDmesh K6 Power MOSFET in a TO-220 package
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1.000
Mult.: 1.000

Si Through Hole TO-220-3 1 Channel 800 V 6 A 900 mOhms - 30 V, 30 V 3.5 V 7 nC - 55 C + 150 C 68 W Enhancement Tube